The Optimization of the Specific On-Resistance of the Vdmos on the Integrated Platform of Vdmos and Ldmos

As is known to all, the operation modes of vertical double-diffused MOS (VDMOS) and lateral double-diffused MOS (LDMOS) are completely different, so retaining performance of the VDMOS will be difficult to deal with the new platform due to variant working modes. A way of optimizing the key performance, specific on-resistance (Rsp) of the vertical double-diffused MOS (VDMOS) on the integrated platform is proposed in this letter. The Rsp of VDMOS is optimized by implanting impurity and long thermal process which is engaged in the platform. The T-CAD simulation and experiments results indicate that the performance of VDMOS is retained successfully.