Analytical models of 3D electric field and specific ON-resistance for a novel split-gate trench VDMOS

In this study, analytical models of 3D electric field and specific ON-resistance ( R ON,sp ) for a novel split-gate trench vertical double-diffused metal-oxide-semiconductor field-effect transistor are proposed. The validity and accuracy of the proposed models are verified by both numerical and experimental results. Analytical models based on the proposed device structure set a new static performance benchmark for the power MOSFET, with R ON,sp ∝ BV 1.01 (breakdown voltage), as opposed to the traditional R ON,sp ∝ BV 2.5 . Based on the analytical models, when the BV takes 100 and 120 V, the R ON,sp decreases by 59% and 61%, respectively, when compared to its conventional counterpart. The BaligA′s figure-of-merit, defined as BV 2 / R ON,sp of the proposed device, is nearly doubled.