What does this research mean for the field?

A 2D analytical model demonstrates that asymmetric channel doping in double-gate MOSFETs effectively controls peak electric field and suppresses short-channel effects such as drain-induced barrier lowering and hot-carrier effects. Novelty: ClaimNovelty.METHODOLOGICAL. Consensus alignment: ConsensusAlignment.NEUTRAL.

What question did this study set out to answer?

To formulate and validate a two-dimensional analytical model investigating the effects of asymmetric channel doping on the electric field distribution, surface potential, and short-channel effects in double-gate MOSFETs.

August 23, 2026Semiconductors

Modelling the Impact of Asymmetric Channel Doping on Electric Field Distribution and Performance of DG MOSFETs

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To formulate and validate a two-dimensional analytical model investigating the effects of asymmetric channel doping on the electric field distribution, surface potential, and short-channel effects in double-gate MOSFETs.
Derived a 2D analytical model by solving Poisson's equation across the channel using full-depletion approximation in subthreshold and near-threshold regimes.
Analyzed the impact of varying gate and drain voltages, channel thickness, doping levels, and source-to-drain channel region length ratios.
Validated the analytical results against numerical simulations conducted with a 2D TCAD Silvaco simulator.
Asymmetric channel doping effectively mitigated the peak electric field and smoothed the surface potential profile along the channel.
Short-channel effects, including drain-induced barrier lowering (DIBL) and the hot-carrier effect, were substantially suppressed.

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Implication

Analytical modeling demonstrates suppressed short-channel effects in asymmetric double-gate MOSFETs, indicating enhanced subthreshold performance and reduced hot-carrier damage.

Cite This Study

Al-Jawadi et al. (2026) studied this question.

synapsesocial.com/papers/6a8aae007677a34114446a88 https://doi.org/10.1134/s1063782626601342

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Implication

Analytical modeling demonstrates suppressed short-channel effects in asymmetric double-gate MOSFETs, indicating enhanced subthreshold performance and reduced hot-carrier damage.

Modelling the Impact of Asymmetric Channel Doping on Electric Field Distribution and Performance of DG MOSFETs

Key Points

Discussion

Implication

Cite This Study

Modelling the Impact of Asymmetric Channel Doping on Electric Field Distribution and Performance of DG MOSFETs

Key Points

Discussion

Implication

Cite This Study

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