A 14T Radiation Resistant Self-Recoverable SRAM Cell

Space radiation malfunctions electric circuits are particularly vulnerable to memory device's sensitive storage nodes and disrupts stored data. Standard 6T SRAM cannot mitigate this interruption. Consequently, multiple authors suggested resilience solutions. However, there is a compromise between the performance of the memory cells and the likelihood of soft errors. This work explores the SR-14T, a polar design self recoverable SRAM memory cell, which efficiently recovers lost data from high-energy particle strikes. SR-14T outperforms its performance in read stability, hold power dissipation, write access time, and effective critical charge even at VDD and temperature variations. The proposed SR-14T additionally attains a superior overall performance to address the trade-off problem.