Secure and Reliable Single-Ended 10T SRAM Cell

Several factors impact Static Random Access Memory performance, notably leakage current attack-based Side-Channel Attacks (SCA) and half-select issues. High radiation environments exacerbate memory cells vulnerable to soft errors. To address these concerns, we propose an SRAM resilient to SCA, half-select issues, and soft errors. Our observations reveal a significant increase-3.33 ×, 2.27 × and 2.24 × in overlap of leakage current distributions, critical charge, and Figure of Merit, respectively, compared to the Power Gated 9T SRAM cell.