The quantum dot (QD) laser proposed by the author in 1982 has now achieved the best performance as a semiconductor laser in most laser characteristics except direct modulation characteristics. We proved the temperature independence of the threshold current in 2004 and further achieved continuous operation at a high temperature of 220°C in 2011. This high-temperature operating characteristic has solidified the QD laser as a promising light source for short-range optical interconnect in silicon photonics, where the thermal effects of LSIs are inevitable. In this talk, recent advances of QD lasers in silicon photonics will be discussed toward high-temperature operation for co-package and near-package optics technologies. QD-based single-photon sources for future quantum integrated circuit systems will also be briefly mentioned.
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Yasuhiko Arakawa (2024) studied this question.
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