Voltage control of electromagnetic properties in antiferromagnetic materials

Dynamic modulation of electromagnetic responses is theoretically examined in dielectric antiferromagnets (AFMs). While both magneto-electric and magneto-elastic coupling can achieve robust electrical control of magnetic anisotropy, the latter is considered in a bilayer structure with a piezoelectric material. Numerical calculations based on the frequency-dependent permeability tensor clearly illustrate that the anisotropy profile in the typical dielectric AFMs such as NiO and Cr 2 O 3 can be modified sufficiently to induce a shift in the resonance frequency by as much as tens of percent in the sub-mm wavelength range (thus, an electrically tunable bandwidth over 10’s of GHz). The polarization of the electromagnetic response is also affected due to the anisotropic nature of the effect, offering a possibility to encode the signal. The intrinsic delay in switching may be minimized to the ns level by using a sufficiently thin AFM. Application to specific devices such as a bandpass filter further illustrates the validity of the concept.