A gate-controllable in-plane magnetic anisotropy with C2v symmetry was observed in a Ni0.46Zn0.54Fe2O4/Pb(Mg1/3Nb2/3)O3-PbTiO3 heterostructure. Detailed amplitude analysis reveals a linearly electric modulation in anisotropy energy that arises from a strain-mediated magnetoelectric coupling across the interface. In particular, an electrically-driven rotational in-plane magnetic easy axis and anisotropic-isotropic transition in NiZn ferrite film, respectively, enable possibilities for magnetization control in multiferroic devices.
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Dong et al. (2014) studied this question.
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