A measurement circuit for the characterization of trapping effects in GaN HEMTs is presented. The circuit is based on the operating principle of separating the high voltage source from the load current generation to ensure maximum flexibility. Due to this separation, the setup can run arbitrary pulse profiles, it is usable in single-pulse and constantly pulsed operation, the maximum measurement duration is unlimited and both hard and soft switched dynamic ON-state resistance evaluation is possible. The setup allows to change switching and measurement current independently, allowing for isothermal hard switching characterization. With the proposed setup, the dynamic ON-state resistance measurement is valid 100 ns after the falling VDS flank. The proposed setup can be helpful to dissect the trap capture and emission dynamics of state-of-the-art GaN power transistors and evaluate the behavior of the dynamic ON-state resistance.
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Weiser et al. (2024) studied this question.
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