Determining GaN HEMT Trap Models from MHz Load-Line Measurement – A Case Study

GaN HEMTs are known to suffer from trapping effects that lead to a reduction in current density depending on previously applied drain voltages. Characterization of the effect currently requires expensive fast-pulsed voltage supplies that can be synchronized with measurement. We propose a method that provides basically the same information based on a dynamic load-line measurement in the lower MHz range, speeding up the measurement process and reducing equipment cost. This paper presents a case study based on simulation of a proven advanced GaN HEMT model in order to explore the general feasibility of the concept.