A new simulation method rather than a pure statistical Monte-Carlo method is developed to model a threshold voltage distribution shift of a NAND Flash memory during ISPP process. A random, normally distributed cell variation is applied to the electrostatic solutions of a single memory cell, and parallel computation is conducted for each cell which includes the compact model and carrier injection statistics. Width of Vₜ distribution has fastly decreased at first several steps due to partial injection among total cells, and increased again since when program voltage is high enough. Field feedback became a dominant factor at final few steps, by reducing the width of distribution. The time-varying change of carrier concentrations is also investigated through the compact model-based simulations.
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Yoo et al. (2024) studied this question.
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