We introduce a physical model for characterizing the transient program operation of Gate-All-Around (GAA) Barrier-Engineered charge-trapping NAND flash (BE-CTNF) memory. Differing from prior models, our approach involves the calculation of threshold voltage shift attributed to each trapping layer, taking into account GAA structure of the cell and, at the same time, electron trapping within the ONO tunneling layer. The rationality of our model was confirmed through a comprehensive analysis of various parameters such as electron capture cross section, total trap density in nitride, etc.
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Choi et al. (2024) studied this question.
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