Exploring Charge Trapping Dynamics in Si:HfO₂-FeFETs by Temperature-Dependent Electrical Characterization

Ferroelectric HfO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> technology shows promise for non-volatile memory and neuromorphic devices. However, charge trapping limits their performance. This work presents temperature-dependent electrical characterization that reveals distinct memory window behaviors, transitioning from ferroelectric to trapping. Our measurements span six orders of magnitude in time, and ambient temperatures of 80-300 K. Analysis of threshold voltage, memory window, and de-trapping dynamics extracts a trap energy level of ~0.2 eV, providing crucial insights for advancing FE HfO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> -based FeFETs technology.