Improved Resistive Switching and Synaptic characteristics on 2-D Graphene/MoS₂/Graphene Memristor using O₂ Plasma Irradiation

Two-dimensional MoS <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> -based memristors have demonstrated remarkable performance attributes, such as precise conductance control and robust operation. However, their limited ON/OFF conductance ratio has posed challenges in terms of reading accuracy and energy efficiency. In addressing this issue, we propose a novel approach involving oxygen plasma irradiation of chemical vapor-deposited trilayer MoS <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> memristors. The proposed memristor exhibits a significantly higher ON/OFF current ratio of approximately (10 2 ), lower OFF-state current (3μ A), the capability for multilevel states, and linear and symmetric conductance changes within the nominal device structure. These improvements stem from the substantial increase in the conductive path due to the presence of MoO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> defect states. The enhanced switching characteristics position oxygen-irradiated MoS <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> devices as promising candidates for large-scale crossbar array applications.