Probing Dit and Memory Window of Solution Processed Oxide

The solution processed charge trapping memory is the heart of the current semiconductor technology. However, the performance of memory technology degrades due to the interface state density between oxide and semiconductor. Here we fabricate solution processed aluminum oxide phosphate (ALPO) dielectric-based MOS device on silicon that demonstrates a large memory window of 11.4 V with a trap density of 3.4 × 10¹² cm⁻² and simultaneously low interface trap density (D <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">it</inf> ) of 1.2 × 10¹¹ cm⁻² eV⁻¹ calculated using the Termann method.