Tailoring SWNT Thin Film Transistor Performance: The Role of CuI Heterostructures

The research explores fabrication and performance enhancement of the semiconducting single-walled Carbon Nanotube (SWNT) thin film Transistors (TFTs) by integrating CuI heterostructures in the channel. The study delves into the mobility (μ <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">FET</inf> ) enhancement via varying the CuI placement in the SWNT FET channel such middle region (CuI <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Midgap</inf> ),or adjacent to source metal contact (CuI <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Source</inf> ).The SWNT-CuI <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Midgap</inf> (or SWNT-CuI <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Source</inf> ) device exhibits 5.3 (or 1.3)-fold increase in the field effect mobility, as compared with bare SWNT FETs. CuI integration optimizes electrical characteristics, showcasing promise for high-performance electronics.