Isothermal Characterization and Thermal Resistance Extraction in SiGe HBTs using Single Pulse Measurement

In this paper, we propose a novel method for extracting the bias-dependent isothermal characteristics of SiGe HBTs using pulsed measurements done only at a single bias point. Furthermore, to test the utility of the proposed technique, we introduce an innovative methodology to obtain the temperature-dependent thermal resistance of SiGe HBTs based on these extracted isothermal characteristics. To validate the effectiveness of our proposed method, we have conducted comprehensive compact model simulations. Our results demonstrate the excellent accuracy and reliability of this new approach for isothermal characterization in SiGe HBTs and extracting their temperature-dependent thermal resistance.