In this work, a dedicated model for HfO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> -based 3D ferroelectric capacitor (FeCAP) with multi-domain polarization switching is proposed, which can capture radial symmetry in geometry for the first time. It reveals the crucial role of cylinder curvature on electrical characteristics and optimum geometry dimension, providing guidance for device optimization. Furthermore, based on the proposed model, the circuit simulation results show that there will be more than 20% and 18% evaluation deviation in sensing margin respectively for 3D FeRAM and FeMFET by utilizing conventional model of planar FeCAP without considering unique feature in 3D geometry.
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Su et al. (2024) studied this question.
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