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Multiscale modeling analyzes switching dynamics in ferroelectric memory, indicating strong experimental alignment.
This paper examines the mathematical modeling of switching dynamics in ferroelectric memory elements based on hafnium and hafnium–zirconium oxides. A two-scale model is proposed, including a quantum-mechanical calculation at the atomic level and a thermodynamic description of the system at the level of the memory element. The simulation results are in good agreement with the experimental data.
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Zhuravlev et al. (2026) studied this question.
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