Time−Domain Simulation and Optimization of the Memory Window for HZO−Based FeFETs Using the NLS Model

Hafnium−zirconium oxide (HZO)−based ferroelectric field−effect transistors (FeFETs) are expected to become core devices for new embedded memory and compute−in−memory systems. However, existing simulations rely on finite−element−based TCAD tools, which are computationally intensive and time−consuming, and they struggle to account for the dynamic flipping of ferroelectric domains. This paper utilizes a time−domain simulation framework based on the nucleation−limited switching (NLS) model coupled with the surface potential of a MOSFET, enabling a self−consistent solution for polarization and electrical characteristics; a Monte Carlo method is employed to simulate device variability, and Shmoo plots are used to identify optimal programming and erasure process windows; an integrated solution is proposed for 22 nm FDSOI devices, addressing geometric scaling, modification of the Landau–Khalatnikov (L−K) dynamic model for ultrathin ferroelectric layers, and suppression of short−channel effects. Model validation is limited to selected operating metrics, and predictive accuracy outside the calibrated cases requires additional independent datasets. This method enables end−to−end simulation of FeFETs, from material polarization and device electrical characteristics to performance optimization, thereby providing model−based analytical and design support for the development of advanced, ultra−low−power FeFETs.