Memory effects in 45-nm PDSOI MOSFETs at Cryogenic Temperatures for Quantum Computing Applications

In this work, floating body related memory effects in PDSOI MOSFETs are investigated using different quiescent (Q)-point conditions for pulsed IV characteristics measured from 300K to 10K. It is observed that depending on the Q-point condition, body charge fluctuations result in drain current dispersions. These dispersions decrease as temperature is ramped down to the cryogenic range. The observed memory effects due to the body charge fluctuations are modeled using BSIM-SOI based GlobalFoundries PDK models. Furthermore, the circuit implications of the transient instabilities are examined to evaluate the performance of PDSOI based CMOS circuits at cryogenic temperatures for their application in co-integrated cryogenic quantum electronics.