UKRI-MPW0 was developed to further improve the radiation tolerance of HV-CMOS pixel sensors. It implements a novel sensor cross-section that uses backside-only biasing to allow high substrate bias voltages > 600 V. In this contribution, the measured results of irradiated UKRI-MPW0 samples are presented, including their current-to-voltage (I-V) characteristics, depletion depth and pixel performance. The chip is proved to have survived high radiation fluence of 3 × 10 15 n eq /cm 2 .
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Zhang et al. (2024) studied this question.
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