Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
October 1, 2025Open Access

Enhancing Radiation Hardness and Granularity in HV-CMOS: The RD50-MPW4 Sensor

View Full Paper
Ask AI
Bookmark
Share

Authors

BPB. PilslTBT. BergauerRCRaimon Casanova

Discussion

Loading...

Member takes

Overview

Testing revealed hit detection efficiency of over 99.9% in non-irradiated sensors, suggesting advancements in radiation tolerance and spatial granularity.

Key Points

  • Hit detection efficiency exceeds 99.9%, showing superior performance in non-irradiated tests.
  • The sensor's design includes a new backside biasing scheme and enhanced guard ring structure for improved efficiency.
  • Neutron-irradiated sensors demonstrated robustness in high-radiation environments during test beam campaigns.
  • HV-CMOS technology effectively restores hit detection efficiency post-irradiation by increasing applied bias voltage.

Cite This Study

Pilsl et al. (2025) studied this question.

synapsesocial.com/papers/68dd91c7fe798ba2fc49863fhttps://doi.org/10.48550/arxiv.2504.15730
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Characterization of the RD50-MPW4 HV-CMOS pixel sensor2024
  2. 2RD50-MPW: a series of monolithic High Voltage CMOS pixel chips with high granularity and towards high radiation tolerance2024 · 2 citations
  3. 3Design and Performance of HV CMOS Sensors for Future Colliders by the RD50 Collaboration2024 · 1 citations
  4. 4Performance of Monolithic CMOS Pixel Sensors Under X-Rays2026
  5. 5An exploratory study of 55 nm HV-CMOS commercial technology for monolithic pixel sensors2025