An exploratory study of 55 nm HV-CMOS commercial technology for monolithic pixel sensors

High-Voltage CMOS (HV-CMOS) pixel sensors are promising candidates for tracking applications in future high-energy physics experiments. Compared to the current mainstream 180 nm–130 nm processes, next-generation smaller technology nodes offer significant potential for improvements in power consumption, design flexibility, and overall performance.We have developed a prototype based on a commercial 55 nm HV-CMOS process to investigate the characteristics of this technology. The design and preliminary test results of the prototype are presented, and the feasibility and potential future optimization directions are discussed.