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August 23, 2026PhysicsOpen Access

Performance of Monolithic CMOS Pixel Sensors Under X-Rays

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Authors

MAM. M. AmeenGDG. DashAVAnusree Vijay

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Overview

Experimental study demonstrates radiation tolerance and stable noise in monolithic CMOS pixel sensors under X-rays, indicating suitability for future particle colliders.

Key Points

  • Evaluate the threshold distribution, noise behavior, and radiation tolerance of monolithic CMOS pixel sensors before and after high-intensity X-ray exposure.
  • Characterized pixel threshold and noise as a function of front-end digital-to-analog converter (DAC) tuning parameters.
  • Subjected sensors to high-intensity X-ray irradiation and conducted pre- and post-irradiation performance comparisons across the pixel matrix.
  • Irradiation caused a systematic shift in detection thresholds—with larger shifts observed at lower threshold settings—while maintaining overall spatial uniformity across the matrix.
  • Electronic noise remained largely stable across the operational parameter space, establishing wide optimal operating regions under radiation stress.

Cite This Study

Ameen et al. (2026) studied this question.

synapsesocial.com/papers/6a8aae337677a341144470d5https://doi.org/10.3390/physics8030062
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  1. 1Characterization of Irradiated Depleted Monolithic Active Pixel Sensors in 150 nm and 180 nm CMOS Technology for High-Rate and High-Radiation Environments2026
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  4. 4Radiation Effects on Scientific CMOS Detectors for X-ray Astronomy: II. Total Ionizing Dose Irradiation2024
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