Performance Analysis of CMOS SRAM 6T, 7T and 9T Cells using Cadence at 180nm Technology

This study deals with the exploration and analysis of CMOS SRAM cells utilizing 180nm technology nodes, conducted through implementation and simulation in the Cadence tool. The focus centers on three distinct SRAM cell architectures: the conventional 6-transistor (6T) cell, an enhanced 7-transistor (7T) variant, and an expanded 9-transistor (9T) configuration. The primary aim is to assess and compare their performance based on critical metrics such as power consumption, Signal to Noise Margin Ratio (SNR), Read Delay, and Write Delay. The design methodology involves designing of each S-RAM cell type, followed by Cadence Virtuoso simulations to evaluate their functionality under diverse operating conditions. The analysis further enables into the performance characteristics of each cell. Simulation results highlight inherent trade-offs in each S-RAM cell design. The simplicity of the 6T cell serves as a baseline, while the 7T and 9T cells demonstrate enhanced stability and reduced susceptibility to read and write disturbances. Significantly, a 39.29% and 22.62 % reduction in power usage for 7T and 9T S-RAM cells, respectively, contrast to the S-RAM 6T cell, emphasizes the potential for selecting an appropriate S-RAM architecture based on specific application requirements, balancing performance, area efficiency, and reliability.