Simulation and Optimization of Pt/ZnO Schottky UV Photodetector with Al Ohmic Contact

The demand for high-performance optoelectronic devices continues to drive research toward new materials and device designs. This research focuses on the simulation and optimization of platinum (Pt)/zinc oxide (ZnO) Schottky photodetectors with aluminum (Al) ohmic contact, employing Silvaco Atlas TCAD simulations to design and analyze the photodetector in the ultraviolet (UV) spectrum region. ZnO, renowned for its wide bandgap and exceptional electronic characteristics, serves as the semiconductor photosensitive material, while Pt and Al are employed as the Schottky and ohmic contacts, respectively. The study aims to unravel the underlying physics governing the optoelectronic behavior of Pt/ZnO Schottky UV photodetector. The simulation results demonstrate superior performance, with a low dark current density (J <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">dark</inf> ) of 8.2×10 –11 pA/cm 2 , better photocurrent density (J <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">light</inf> ) of 0.26 μA/cm 2 along with a remarkable J <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">light</inf> /J <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">dark</inf> ratio of 3.1×10 15 , 3-dB cut-off frequency of 85.4 GHz, external quantum efficiency of 90.41%, external photocurrent responsivity of 0.26 A/W, detectivity of 1.55×10 16 cmHz 1/2 /W, and rapid photoswitching rise (fall) time of 71 (71) ps at a bias of –1.0 V. This research not only deepens the understanding of fundamental device principles but also offers a roadmap for engineers and researchers working towards the development of advanced optoelectronic devices.