Electron Transport Characteristics of Photosensitive Al/ZnO/Pt Schottky Junction Fabricated on (002) Oriented Pulsed Laser‐Deposited ZnO Thin Film

Herein, pulsed laser‐deposited ZnO thin‐film‐based devices have been extensively studied in terms of their structural, dielectric, and electron transport properties. Structural analysis using X‐ray diffraction reveals that the deposited film has a preferred (002) orientation with an average crystallite size of 20.05 nm, calculated by Debye–Scherrer formula. Using the deposited ZnO layer, Al/ZnO/Pt‐based metal–semiconductor–metal junction has been prepared. From room temperature DC current–voltage characteristics, the illuminated Al/ZnO junction's calculated Schottky barrier height is found to be 0.78 eV with a high ideality factor of 6.92. The fabricated device is found to be photosensitive in nature, with measured response and recovery time of 0.93 s and 0.55 s, respectively, when illuminated by a light‐emitting diode overhead flashlight.