Sensing voltage of MEMS Accelerometer using Polycrystalline Silicon (Si),Gallium Arsenide (GaAs) and Germanium (Ge)

Accelerometers are inertial sensors that detect acceleration and forces along three orthogonal axes, then the readings are produced as a digital or analog signal and used in various applications. Microelectromechanical systems (MEMS) have recently been utilized to perform inertial sensing techniques on an integrated circuit (IC) at micro size. Due to the various characteristics of MEMS materials and how they affect the sensitivity of the MEM Accelerometer with these variations. In this study, a MEMS accelerometer model was created using the COMSOL program. The design was then applied to polycrystalline Silicon (Si), Gallium Arsenide (GaAs), and Germanium (Ge), and the sensing voltage was determined using each material to clarify which of these materials performed best.