Answers are grounded in this paper and cite their sources.
We compared static and dynamic characteristics of a 1.2 kV-Class SJ-MOSFET fabricated by the multi-epitaxial growth (ME) method and the trench-filling epitaxial growth (TFE) method, which is expected to have a lower process cost. Comparably low specific on-resistance and switching losses were observed for the SJ-MOSFETs fabricated by both methods.
No takes yet. Share an insight, caveat, or question.
Sometani et al. (2024) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: