Performance Enhancement of Three Fins Vertically Stacked Quad Gate Nanosheet by Employing Rectangular Core–Shell, Doping and Gate-Dielectric Engineering

A Rectangular core–shell (RCS), employed to three fins vertically stacked with gate oxide stack junctionless nanosheet, along with doping and gate/dielectric engineering, is explored. This paper proposes an N-type three fins vertically stacked with gate oxide stack junctionless nanosheet with opposite core doping in the channel referred to as RCS. The simulation results show that three fins vertically stacked with gate oxide stack with RCS junctionless nano-sheet exhibit reduced Ioff is 6.913E-21, increased Ion is 2.408E-07, Ion/Ioff ratio is 0.418×106, DIBL is 6.9mV and SS is 60.65 mV/dec, respectively. Furthermore, the P-type of three fins vertically stacked with gate oxide stack junctionless nanosheet and combined -type and P-type three fins vertically stacked with gate oxide stack junctionless nano-sheet were stimulated to construct the inverter circuit. The Voltage Transfer Characteristics (VTC) of three fins vertically stacked with gate oxide stack junctionless nano-sheet with RCS have HfO2 as the gate-oxide based inverter has been notably improved compared to SiO2, al2O3 as a gate oxide and conventional three fins vertically stacked with gate oxide stack junctionless nano-sheet inverter.