A Radiation Hardened 6T SRAM Design

As the Internet of Things (IoT) ecosystem grows, so the need for efficient and dependable memory devices increases linearly. IoT based devices requires memory that consumes less area on integrated circuits which directly related with the low cost of application which fulfilling the consumer demands. In this way, 6T SRAM cell is a wise option for IoT based applications and becomes more advantageous due to its structure which occupied less area on integrated circuits. Conv. 6T SRAM cell is more suitable for electronic applications that requires less area consumption with minimal device performance. This paper examines the stability of a 6T SRAM cell using the butterfly curve method. As well as, paper presents how ionized radiation particle altered the stored data in the 6T SRAM cell by giving analysis of proper Radiation Hardening. This 6T SRAM cell has a tendency to soft errors because of less value of critical charge. The Cadence Virtuoso tool is being used to investigate the mitigation of flipping data caused by radiation hardening for 6T SRAM cells over 45nm technology nodes at 1V supply voltage.