Engineering High-Efficiency CZTSSe Solar Cells: Investigating the Role of Absorption Layer Thickness and Doping Density

This study was centered on the examination of the ZnO/Cds/CZTSSe/ MO(S,Se) <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> (CZTSSe PSCs) by variations in the active layer's thickness and N <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">A</inf> . The device is simulated using software known as a Solar Cell Capacitance Simulator, or SCAPS-1D. Because of its stability and conductivity, ZnO is taken into consideration in this device, while in the design of solar cells, Cds is employed as the buffer layer.. Mo(Se,S) <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> is considered in this solar cell due to its allowing efficient carrier transport. Because of its more than 10 4 cm -1 absorption coefficient and suitable bandgap of 1.0–1.5 eV, CZTSSe is regarded as the solar cell's absorption layer.. The study goal is maximizing the absorption of electrons. The performance of the device is evaluated in relation to variations in the active layer's thickness from 100 nm to 1000 nm and in N <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">A</inf> from 10 14 to 10 19 /cm 3 . The diagrams illustrate how the PV parameters rise with absorption layer thickness. This resulted in the charge carrier recombining. The CZTSSe based solar cell's achieved PV parameters are as follows: V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OC</inf> : 0.79V, J <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">SC</inf> : 38mA/cm 2 , FF: 85.80% and PCE: 21.70%.