Highly stable BiFeO3 RRAM with multilevel storage application

This is the authors' abstract. We don't add key points for this paper.

In this paper, we discuss the fabrication process of BiFeO3 (BFO) thin film with sol-gel method and the device characteristics of BiFeO3 resistive random access memory (RRAM). The resistive states characteristics were obtained under Al/BiFeO3/ITO structure and showed good retention performance with no obvious degradation. RRAM here shows bipolar resistive switching characteristic for a hundred times switching cycles with a resistance ratio (RHRS/RLRS) of more than 1 order and high stable retention characteristic for over 104 seconds with a resistance ratio (RHRS/RLRS) of around 2 orders. In this study, our research group illustrates the application of BFO in the development of non-volatile memory.