Fin FETs (FinFETs) are a promising candidate for the platform of Si quantum computers. The noise properties of commercial FinFETs were experimentally investigated at temperatures below 10 K. The drain current showed Coulomb oscillation, indicating that the FinFET channel became a single quantum dot. Moreover, the noise in the drain current was analyzed, and the basic properties of commercial FinFETs in the low-temperature region were discussed.
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Tanamoto et al. (2024) studied this question.
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