Design and Implementation of a High-Voltage Radiation-Hard Hall Switch Sensor

This paper presents a high-voltage radiation-hard Hall switch sensor based on a 0.35 μm BCD process. The correlation double sampling (CDS) circuit which is the most sensitive block to single-event effect (SEE) is hardened by dual path design. Through emulation-based fault injection technology, narrow pulse filters are introduced into the sensitive nodes. Besides, to meet the requirement of high-voltage integrated circuits under radiation environment, LDMOS devices are hardened to enhance their single-event burnout (SEB) threshold voltage and TID tolerance. Experimental results demonstrate that the proposed 28-V Hall switch sensor has anti-TID capability up to 100 krad(Si) and is tolerant to single-event burnout (SEB) and single-event upset (SEU) after 1600-pJ pulsed-laser irradiation.