Development of a sensitive UV photodetector with high photoresponsivity and low detection limit, suggesting significant advancements in UV detection.
The increasing demand for high-precision ultraviolet (UV) detection in applications such as environmental monitoring, industrial inspection, and public safety necessitates the development of advanced UV power meters with high sensitivity, and low detection limits. In this work, we demonstrate a high-performance UV photodetector based on the interface barrier controlled two-dimensional heterostructure of Au/hBN/MoS 2 on Si/SiO 2 substrate, which can function as a precise UV power meter with high precision. The device exhibits an ultrahigh photoresponsivity up to 1.03×10 5 A/W to 254 nm UVC light with an excellent spectral selectivity. In particular, the distinctive inverse relationship between the response time and incident light intensity enables accurate power calibration for incident UV irradiation. The device, demonstrated in a TO-46 packaged configuration, is capable of detecting UV light with intensities as low as 0.7 μW/cm 2 . Its measurement accuracy is verified through the power radiation law, and the detection limit surpasses that of commercial UV power meters. These results highlight a promising strategy for developing next-generation UV photodetectors based on two-dimensional heterostructures.
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Huang et al. (2025) studied this question.
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