Deep Traps in Ga2O3 Schottky Diodes Induced by Soft Electric Breakdown

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This is a Quantitative Study study.

A. Y. Polyakov; I. Shchemerov; E. B. Yakimov; А. В. Черных; С. В. Черных; A.A. Vasil'ev; N. R. Matros; Andrey A. Romanov; L. A. Alexanyan; E. E. Yakimov; S. J. Pearton

doi:10.1039/d5ma00831j

January 1, 2025Materials AdvancesOpen Access

Deep Traps in Ga2O3 Schottky Diodes Induced by Soft Electric Breakdown

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Key Points

Electric breakdown leads to significant deep traps in Ga2O3 Schottky diodes, which impacts performance.
Devices with diameters from 200 to 380 µm were analyzed, revealing variations in electrical behavior.
This investigation utilized advanced fabrication modes for Ga2O3 Schottky diodes to assess deep trap behavior.
Findings suggest that better understanding of deep traps may improve Ga2O3 diode efficiency in applications.

Implication

Study analyzes deep trap formation in Ga2O3 Schottky diodes fabricated with varying diameters, indicating electric breakdown implications.

Abstract

We report the electrical characteristics and deep trap behavior of vertical Ga2O3 Schottky diodes with diameters ranging from 200 to 380 µm, fabricated on commercial n/n+ epistructures. There was a...

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Cite This Study

Polyakov et al. (2025) studied this question.

synapsesocial.com/papers/68f3793258f37cefb60d3687 https://doi.org/10.1039/d5ma00831j

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Deep Traps in Ga2O3 Schottky Diodes Induced by Soft Electric Breakdown

Key Points

Implication

Abstract

Discussion

Cite This Study

Deep Traps in Ga2O3 Schottky Diodes Induced by Soft Electric Breakdown

Key Points

Implication

Abstract

Discussion

Cite This Study

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