Progress and performance of 6×12 EUV photomask in RSP612 carrier

High NA and Hyper NA EUV systems are the next big steps to push Moore's Law further in pursuit of shrinking transistors. Since a high-NA EUV scanner has a half field size due to the anamorphic lens design, two masks are necessary for exposing a chip larger than the half field. This means large dies need to be exposed in multiple stitched fields to achieve the required area. Currently, semiconductor industry is going through extensive discussion about large size mask (6x12") in order to improve the productivity expectations in high-NA scanner. As photomask size increases, manufacturing of a reliable and contamination-free carrier becomes more challenging. This paper presents the progress and performance of RSP612 (carrier for reticle size 6x12") and future strategies. We investigated that, how stress is distributed within a reticle (6x12") on RSP612. The analysis is carried by employing ANSYS simulation. The vibration and slide tests data provide the reticle (6x12") stability in RSP612 during shipping and other operations. In addition, the purge tests are conducted to determine the quality of mini-environment control such as humidity in RSP612. These results offer valuable insights and challenges in moving towards large size EUV photomask for semiconductor industry.