Analysis demonstrates improved critical dimension control in EUV imaging, suggesting optimized source masks may enhance lithographic performance.
The high absorption characteristics of EUV resists lead to sloped resist profiles and variability in critical dimension (CD) through the resist height. This variability affects the process window and depth of focus, especially for 0.55NA systems where the resist height and depth of focus are comparable. The document explores the use of three-dimensional (3D) source mask optimization (SMO) to control resist profiles and improve lithographic performance.
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Dhagat et al. (2025) studied this question.
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