Control of Growth Rate and Crystal Quality in 6‐in. SiC Top‐Seeded Solution Growth

Silicon carbide (SiC), a wide‐bandgap semiconductor, exhibits outstanding properties that make it highly suitable for high‐performance electronics. Top‐seeded solution growth (TSSG) is a promising method for growing high‐quality SiC single crystals. This study focuses on the growth of 6‐in. 4H‐SiC crystals using the TSSG method. Through numerical simulations and experiments, the effects of solution diameter ( D = 200–300 mm), seed rotation speed ( ω = 50–200 rpm), and relative distance between the crucible and coil (Δ H = 10—40 mm) on crystal growth rate and surface quality are investigated. The results demonstrate that increasing D and ω reduces the growth rate disparity between the center and periphery of the seed crystal, improving surface morphology and eliminating solvent inclusions. A D of 240 mm yields the maximum growth rate, while a larger diameter enhances growth stability. Higher rotation speeds facilitate faster growth rates and promote uniform growth. Increasing Δ H shifts the high‐temperature zone position, reducing the overall growth rate, expanding the crystal diameter by 10 mm, which alters the crystal shape from circular to hexagonal. The optimized parameters ( D = 270–300 mm, ω = 200 rpm, Δ H < 0) enable controllable growth of 6‐in. SiC crystals.