Ferroelectric Switching Dynamics of Poly(Vinylidene Fluoride‐Ran‐Trifluoroethylene) Thin Films Deposited on Fluorine‐Doped Tin Oxide and Pt Bottom Electrodes on Glass Substrates

In ferroelectric thin film fabrication on silicon and glass substrates, Pt bottom electrodes are commonly used. However, transparent fluorine‐doped tin oxide (FTO) electrodes improve film crystallinity. We investigated the effect of bottom electrodes on the ferroelectric, piezoelectric, and switching properties of PVDF‐TrFE thin films deposited on FTO and Pt electrodes. PVDF films on FTO exhibited superior crystallinity, larger remanent and saturated polarizations, higher piezoelectric coefficients, and faster switching compared to films on Pt. Local domain switching experiments showed lower activation energy for domain wall movement in FTO‐based films, explaining their faster switching. These results highlight the potential of PVDF‐TrFE thin films for nonvolatile memory applications depending on electrode type.