This research demonstrates ferroelectricity with a two-dimensional electron gas in complex oxide interfaces, suggesting improvements for multifunctional devices.
Integrating multiple functionalities within a single electronic device remains a pivotal research focus, particularly for achieving the coexistence of ferroelectricity and metallic conductivity. As symmetry-broken systems, complex oxide interfaces exhibit diverse correlated phenomena that enable the coupling of distinct properties. Here, we fabricate Hf0.5Zr0.5O2/SrTiO3 heterostructures with reproducible metallic two-dimensional electron gas (2DEG) at their interfaces. By employing the interfacial 2DEG as the bottom electrode in a parallel-plate capacitor configuration, the fabricated Pt/Hf0.5Zr0.5O2/2DEG/SrTiO3 devices demonstrate pronounced ferroelectricity in Hf0.5Zr0.5O2 films. Elucidating the mechanism of the coexistence of metallic conductivity and ferroelectricity at the interfaces is crucial for advancing ferroelectric metals in complex oxides and developing multifunctional devices.
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Yu et al. (2025) studied this question.
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