Analysis shows increased dislocation density in AlGaN layers grown on tiled GaN substrates, suggesting material quality implications.
AlxGa1-xN layers with up to 53% Al composition and 1.3 µm total thicknesses were grown utilizing step-graded layers on dense arrays of 10 × 10 µm2 GaN tiles. While the layers were fully relaxed and crack-free, the higher Al composition sample showed increased X-ray line width, which did not correlate with a lack of increased dislocation density (as measured by TEM).
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Hatui et al. (2025) studied this question.
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