November 1, 2025APL MaterialsOpen Access

Visualization of grain boundary-mediated domain nucleation and growth in polycrystalline Pb(Zr52Ti48)O3 ferroelectric capacitor

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Domain nucleation predominantly occurs at grain boundaries, influencing polarization reversal and switching kinetics.
Piezoresponse force microscopy revealed that forward voltage sweeps promote better switching performance than reverse sweeps.
The nucleation-limited switching model fit data, indicating nucleation is the rate-limiting factor in switching dynamics.
Enhanced uniformity in domain nucleation is observed at higher electric fields, supporting optimized ferroelectric device performance.

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Implication

Piezoresponse force microscopy shows domain nucleation occurs at grain boundaries in ferroelectric capacitors, suggesting improvements in polarization reversal.

Cite This Study

Buyantogtokh et al. (2025) studied this question.

synapsesocial.com/papers/69254377c0ce034ddc358b6d https://doi.org/10.1063/5.0275230

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Implication

Piezoresponse force microscopy shows domain nucleation occurs at grain boundaries in ferroelectric capacitors, suggesting improvements in polarization reversal.

Visualization of grain boundary-mediated domain nucleation and growth in polycrystalline Pb(Zr52Ti48)O3 ferroelectric capacitor

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Discussion

Implication

Cite This Study

Visualization of grain boundary-mediated domain nucleation and growth in polycrystalline Pb(Zr52Ti48)O3 ferroelectric capacitor

Key Points

Discussion

Implication

Cite This Study

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