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The study aims to understand how ferroelectric and ferroelastic domains interact and affect device performance in PZT thin films.

Configuration-Dependent Interactions between Ferroelectric and Ferroelastic Domains in PZT Thin Films Revealed by In Situ TEM

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The study aims to understand how ferroelectric and ferroelastic domains interact and affect device performance in PZT thin films.
Utilized in situ transmission electron microscopy (TEM) to observe domain interactions.
Conducted phase-field simulations to analyze the effects of substrate strain on domain wall configurations.
Examined various ferroelastic domain geometries including regular, tilted, and partial configurations.
Identified that substrate-strain-mediated electromechanical coupling distorts ferroelastic walls, creating localized charge centers.
Demonstrated that configurations lead to dual responses: constructive field superposition can accelerate ferroelectric switching.
Showed that some configurations can pin moving walls due to wall bending and electrostatic repulsion.

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Randomized trial investigates domain dynamics in PZT thin films, suggesting pathways for improved device performance.

Ding et al. (2026) studied this question.

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