Device validates multiply-accumulate calculation using a memristor, highlighting low power consumption and wide dynamic ranges.
A “memriscapacitor” consisting of a memristor and capacitor has been proposed and actually fabricated. The advantages are the wide dynamic ranges and low power consumption achieved simultaneously. First, the device structure is quite simple, namely, an amorphous Ga-Sn-O thin film between electrodes acts as a memristor, whereas a SiO2 film acts as a capacitor. Next, the hysteresis characteristic of the memristor is observed. Finally, it is validated that the multiply-accumulate calculation is realized as desired by the memriscapacitor.
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Yachida et al. (2025) studied this question.
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