Interfacial charge transfer-mediated Fermi level pinning in MBE-grown 2D 2H-MoSe ₂ /2H-MoTe ₂ heterostructures

Kamlesh Bhatt; Santanu Kandar; Lipika; Ashok Kapoor; Rajendra Singh

doi:10.1039/d5nh00663e

January 1, 2025Nanoscale Horizons

Interfacial charge transfer-mediated Fermi level pinning in MBE-grown 2D 2H-MoSe ₂ /2H-MoTe ₂ heterostructures

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Key Points

Band offsets were significantly modified by localized Se–Te charge transfer.
Key evidence shows that interfacial bonding alterations impact energy levels.
Assessment focused on 2D MoSe2/MoTe2 heterostructures and charge transfer mechanisms.
Highlights the implications for effective band engineering in 2D materials.

Implication

Analysis reveals localized Se–Te charge transfer impact on band offsets in 2D MoSe2/MoTe2 heterostructures, indicating challenges in band engineering.

Abstract

The dominant role of localized Se–Te charge transfer and Te migration-induced interfacial bonding alterations in modifying energy levels and band offsets in 2D MoSe 2 /MoTe 2 heterostructures, addressing key challenges in band engineering.

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Cite This Study

Bhatt et al. (2025) studied this question.

synapsesocial.com/papers/6925572cc0ce034ddc35a8d4 https://doi.org/10.1039/d5nh00663e

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Interfacial charge transfer-mediated Fermi level pinning in MBE-grown 2D 2H-MoSe ₂ /2H-MoTe ₂ heterostructures

Key Points

Implication

Abstract

Discussion

Cite This Study

Interfacial charge transfer-mediated Fermi level pinning in MBE-grown 2D 2H-MoSe ₂ /2H-MoTe ₂ heterostructures

Key Points

Implication

Abstract

Discussion

Cite This Study

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