Chemical Vapor Deposition‐Grown Hierarchical SnS ₂ Nanostructures for High‐Performance Supercapacitor Electrodes

Transition metal sulfides and their composite materials have received considerable attention as electrode materials for electrochemical devices. In particular, tin(IV) disulfide (SnS 2 ) nanoflowers have attracted significant interest because of their unique nanoscale architectures and layered crystalline structures. Herein, this study investigates the controlled synthesis of hierarchical SnS 2 nanostructures via chemical vapor deposition (CVD) and their potential as advanced electrode materials for high‐performance supercapacitors. X‐ray diffraction (XRD) analysis confirmed the hexagonal crystalline phase of SnS 2 , while X‐ray photoelectron spectroscopy (XPS) verified the chemical states and elemental composition of the synthesized material. Morphological analysis using scanning electron microscopy (SEM) revealed a consistent flower‐like nanostructure, whereas stoichiometry of Sn and S elements was confirmed through energy‐dispersive X‐ray analysis. Cyclic voltammetry (CV) indicated pseudocapacitive behavior, with chronopotentiometry yielding a specific capacitance of 187 F/g at 0.5 A/g. Electrochemical impedance spectroscopy (EIS) analysis revealed a low charge‐transfer resistance ( R ct ) of approximately 1.2 Ω. Additionally, long‐duration stability assessments at a current density over 5000 cycles demonstrated outstanding cycling stability, retaining approximately 88% of the original capacitance. This improved electrochemical performance was primarily due to the SnS 2 nanostructures featuring a flower‐mimetic shape, which substantially increased the effective surface area and enhanced the accessibility of the electroactive sites, thus, significantly increasing the specific capacitance.