Initiation of Periodic Relief Development on the Silicon Surface under Ion Irradiation

The report presents the results of studying the process of a periodic relief nucleation on the silicon surface irradiated with a 30 keV focused beam of gallium ions at ion beam incidence angles θ = 30°, 40° and 50°. It is shown that that the factors initiating the origin of periodic relief are: gallium precipitates in the near-surface silicon layer (θ=30°), topographic heterogeneity in the form of a hole at the boundary of the bottom and the frontal wall of the sputtering crater (θ=40° and 50°).